S-Band
MACOM’s GaN-on-SiC products are well suited for pulsed and CW S-band applications. With a variety of power levels, high gain/stage and high power-added efficiency, MACOM’s products support continuous improvements in SWAP-C benchmarks, thereby supporting the next generation of radar systems in areas such as air traffic control, weather radar, and shipborne radars.
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70 W; 0.5 - 3.0 GHz; GaN HEMT | 500 | 3000 | 80 | 15 | 55 | 28 | Packaged Discrete Transistor | Flange | ||
10 W RF Power GaN HEMT | 0 | 6000 | 10 | 65 | 28 | Packaged Discrete Transistor | Flange, Pill | |||
25 W RF Power GaN HEMT | 0 | 6000 | 25 | 62 | 28 | Packaged Discrete Transistor | Flange, Pill | |||
35 W RF Power GaN HEMT | 0 | 6000 | 35 | 14 | 64 | 28 | Packaged Discrete Transistor | Flange, Pill | ||
45 W RF Power GaN HEMT | 0 | 4000 | 45 | 55 | 28 | Packaged Discrete Transistor | Flange, Pill | |||
15 W; 8.0 GHz ; GaN HEMT Die | 0 | 8000 | 15 | 70 | 28 | Discrete Bare Die | Die | |||
30 W; 8.0 GHz; GaN HEMT Die | 0 | 8000 | 30 | 17 | 65 | 28 | Discrete Bare Die | Die | ||
45 W, 8.0 GHz, GaN HEMT Die | 0 | 8000 | 45 | 15 | 65 | 28 | Discrete Bare Die | Die | ||
60 W; 8.0 GHz; GaN HEMT Die | 0 | 8000 | 60 | 70 | 28 | Discrete Bare Die | Die | |||
120 W; DC - 8000 MHz; 28 V; GaN HEMT Die | 0 | 8000 | 120 | 12 | 65 | 28 | Discrete Bare Die | Die | ||
240 W; 1800 - 2300 MHz; GaN HEMT for WCDMA; LTE; WiMAX | 1800 | 2300 | 240 | 15 | 33 | 28 | Packaged Discrete Transistor | Flange | ||
15 W; 28 V; GaN HEMT for Linear Communications ranging from VHF to 3 GHz | 0 | 6000 | 15 | 15 | 28 | 28 | Packaged Discrete Transistor | Flange, Pill | ||
15 W, 28 V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz | 0 | 6000 | 15 | 15 | 28 | 28 | Packaged Discrete Transistor | Pill | ||
30 W, DC - 6.0 GHz, 28 V, GaN HEMT | 0 | 6000 | 30 | 18 | 33 | 28 | Packaged Discrete Transistor | Flange, Pill, Surface Mount | ||
8 W (average); 28 V; GaN HEMT for linear communications ranging from VHF to 3 GHz | 0 | 4000 | 60 | 14 | 27 | 28 | Packaged Discrete Transistor | Flange | ||
240 W; 2700 - 3100 MHz; 50 - ohm Input/Output Matched GaN HEMT for S - Band Radar Systems | 2700 | 3100 | 240 | 12 | 60 | 28 | Packaged Discrete Transistor | Flange | ||
60 W; 3100 - 3500 MHz; 28 V GaN HEMT | 3100 | 3500 | 60 | 12 | 60 | 28 | Packaged Discrete Transistor | Flange, Pill | ||
6 W RF Power GaN HEMT | 0 | 6000 | 6 | 11 | 65 | 28 | Packaged Discrete Transistor | Pill, Surface Mount | ||
10 W RF Power GaN HEMT | 0 | 6000 | 10 | 14 | 65 | 28 | Packaged Discrete Transistor | Flange, Pill | ||
25 W RF Power GaN HEMT | 0 | 6000 | 25 | 13 | 62 | 28 | Packaged Discrete Transistor | Flange, Pill | ||
35 W RF Power GaN HEMT | 0 | 6000 | 35 | 13 | 60 | 28 | Packaged Discrete Transistor | Flange | ||
45 W RF Power GaN HEMT | 0 | 4000 | 45 | 12 | 55 | 28 | Packaged Discrete Transistor | Flange, Pill | ||
90 W RF Power GaN HEMT | 0 | 4000 | 90 | 14 | 55 | 28 | Packaged Discrete Transistor | Push-Pull | ||
120 W RF Power GaN HEMT | 0 | 3000 | 120 | 15 | 70 | 28 | Packaged Discrete Transistor | Flange, Pill | ||
180 W RF Power GaN HEMT | 0 | 3000 | 180 | 15 | 70 | 28 | Packaged Discrete Transistor | Push-Pull | ||
30 W; 5500 - 5800 MHz; 28 V; GaN HEMT for WiMAX | 0 | 6000 | 30 | 10 | 25 | 28 | Packaged Discrete Transistor | Flange, Pill | ||
8 W; 6.0 GHz; GaN HEMT Die | 0 | 6000 | 8 | 12 | 65 | 28 | Discrete Bare Die | Die | ||
15 W; 6.0 GHz; GaN HEMT Die | 0 | 6000 | 15 | 12 | 65 | 28 | Discrete Bare Die | Die | ||
30 W; 6.0 GHz; GaN HEMT Die | 0 | 6000 | 30 | 12 | 65 | 28 | Discrete Bare Die | Die | ||
60 W; 6.0 GHz; GaN HEMT Die | 0 | 6000 | 60 | 12 | 65 | 28 | Discrete Bare Die | Die | ||
120 W; 6.0 GHz; GaN HEMT Die | 0 | 6000 | 120 | 12 | 65 | 28 | Discrete Bare Die | Die | ||
6 W; DC - 15.0 GHz; 40 V; GaN HEMT | 0 | 15000 | 6 | 7 | 52 | 40 | Packaged Discrete Transistor | Surface Mount | ||
25 W; DC - 15 GHz; 40 V; GaN HEMT | 0 | 15000 | 25 | 11 | 51 | 40 | Packaged Discrete Transistor | Surface Mount | ||
6 W; 18.0 GHz; GaN HEMT Die | 0 | 18000 | 6 | 17 | 60 | 40 | Discrete Bare Die | Die | ||
25 W; 18.0 GHz; GaN HEMT Die | 0 | 18000 | 25 | 17 | 60 | 40 | Discrete Bare Die | Die | ||
70 W; 18.0 GHz; GaN HEMT Die | 0 | 18000 | 70 | 17 | 60 | 40 | Discrete Bare Die | Die | ||
15 W; DC - 6.0 GHz; 50 V; GaN HEMT | 0 | 6000 | 15 | 21 | 32 | 50 | Packaged Discrete Transistor | Surface Mount | ||
30 W; DC - 6.0 GHz; GaN HEMT | 0 | 6000 | 30 | 21 | 32 | 50 | Packaged Discrete Transistor | Surface Mount | ||
60 W; DC to 2700 MHz; 50 V; GaN HEMT for LTE and Pulse-Radar Applications | 0 | 2700 | 60 | 17 | 64 | 50 | Packaged Discrete Transistor | Plastic | ||
500W, 2.7 - 3.1 GHz, GaN IMFET | 2700 | 3100 | 500 | 13 | 60 | 50 | Packaged Discrete Transistor | Flange | ||
60 W; 2700 to 3800 MHz; 50 V; GaN HEMT for S-Band Radar and LTE Base Stations | 2700 | 3800 | 60 | 15 | 67 | 50 | Packaged Discrete Transistor | Plastic | ||
120 W; 2.9 - 3.8 GHz; 50 V; GaN HEMT for S-Band Radar Systems | 3100 | 3500 | 120 | 13 | 62 | 50 | Packaged Discrete Transistor | Flange | ||
150 W; 2900 - 3500 MHz; 50 V; GaN HEMT for S-Band Radar Systems | 2900 | 3500 | 150 | 14 | 50 | 50 | Packaged Discrete Transistor | Flange, Pill | ||
400 W; 2900 - 3500 MHz; 50 ohm Input/Output Matched; GaN HEMT for S-Band Radar Systems | 2900 | 3500 | 400 | 11 | 60 | 50 | Packaged Discrete Transistor | Flange | ||
400 W; 3300 - 3700 MHz; 50 ohm Input/Output Matched; GaN HEMT for S-Band Radar Systems | 3300 | 3700 | 550 | 14 | 55 | 48 | Packaged Discrete Transistor | Flange | ||
2.75 - 3.75, 400W GaN on SiC HPA | 2750 | 3750 | 400 | 9 | 55 | 50 | Packaged Discrete Transistor | Flange | ||
30 W; DC - 6 GHz; 50 V; GaN HEMT | 0 | 6000 | 30 | 16 | 70 | 50 | Packaged Discrete Transistor | Flange, Pill | ||
50 W; DC - 4.0 GHz; 50 V; GaN HEMT | 0 | 4000 | 50 | 16 | 53 | 50 | Packaged Discrete Transistor | Flange, Pill | ||
100 W; DC CGHV40100 3 GHz; 50 V; GaN HEMT | 0 | 3000 | 100 | 18 | 55 | 50 | Packaged Discrete Transistor | Flange, Pill | ||
320 W; 4.0 GHz; GaN HEMT Die | 0 | 4000 | 320 | 19 | 65 | 50 | Discrete Bare Die | Die | ||
40 W; 6.0 GHz; GaN HEMT Die | 0 | 6000 | 40 | 62 | 50 | Discrete Bare Die | Die | |||
75 W; 6.0 GHz; GaN HEMT Die | 0 | 6000 | 75 | 7 | 65 | 50 | Discrete Bare Die | Die | ||
170 W; 6.0 GHz; 50 V GaN HEMT Die | 0 | 6000 | 170 | 17 | 65 | 50 | Discrete Bare Die | Die | ||
2 W; 20 MHz - 6000 MHz; GaN MMIC Power Amplifier | 0 | 6000 | 2 | 17 | 23 | 28 | Packaged MMIC | Flange | ||
25 W; DC - 6.0 GHz; GaN MMIC Power Amplifier | 0 | 6000 | 25 | 18 | 33 | 50 | Packaged MMIC | Flange, Die | ||
5 W; 0.5 - 2.7 GHz; 50 V; GaN MMIC for Power Amplifiers | 500 | 2700 | 5 | 20 | 47 | 50 | Packaged MMIC | Flange | ||
35 W; 2.0 - 6.0 GHz; 28V; GaN MMIC Power Amplifier | 2000 | 6000 | 35 | 30 | 35 | 28 | Packaged MMIC | Flange, Die | ||
25 W; 2.5 - 6.0 GHz; GaN MMIC Power Amplifier | 2500 | 6000 | 25 | 24 | 31 | 28 | Packaged MMIC, MMIC Bare Die | Flange, Die | ||
15 W, 2.7 to 3.5 GHz, 50 V, GaN MMIC Power Amplifier | 2700 | 3500 | 15 | 33 | 45 | 50 | MMIC Bare Die | Die | ||
30 W, 2.7 - 3.5 GHz, 50 V, GaN MMIC Power Amplifier | 2700 | 3500 | 30 | 30 | 45 | 50 | Discrete Bare Die | Die | ||
75 W, 2.7 - 3.5 GHz, GaN MMIC Power Amplifier | 2700 | 3500 | 75 | 29 | 61 | 28 | MMIC Bare Die | Flange, Die | ||
80 W; 2.7 - 3.8 GHz; GaN MMIC; Power Amplifier | 2700 | 3800 | 80 | 34 | 54 | 50 | Packaged MMIC | Flange | ||
150W; 2.9 - 3.5 GHz; GaN MMIC | 2900 | 3500 | 150 | Packaged MMIC | ||||||
3.1 - 3.5 GHz; 60 W; Packaged GaN MMIC Power Amplifier | 3100 | 3500 | 75 | 20 | 53 | 50 | Packaged MMIC | Plastic, Surface Mount | ||
50 W; 5200 - 5900 MHz; 28 V; GaN MMIC for Radar Power Amplifiers | 5000 | 5900 | 60 | 23 | 50 | 28 | Packaged MMIC | Die | ||
5.0 - 5.9 GHz, 100W GaN MMIC HPA | 5000 | 5900 | 100 | 25 | 50 | Packaged MMIC | Surface Mount |