X-Band
MACOM’s GaN-on-SiC products are well suited for pulsed and CW X-Band applications. With a variety of power levels, high gain/stage and high power-added efficiency (PAE), MACOM’s products support continuous improvements in SWAP-C benchmarks. The performance demonstrated by many of these devices support the next generation of marine, ground and airborne radar platforms such as weather, air-traffic control, fire-control, as well as other defense and commercial based systems. And, MACOM’s versatile packaging capabilities provide several options for customers to implement these products into various types of systems, while managing critical factors such as thermals.
| Part Number | Description |
|---|---|
| CGHV1F025 | 25 W; DC - 15 GHz; 40 V; GaN HEMT |
| CMPA601C025 | 40 W; 6.0 - 12.0 GHz; GaN MMIC; Power Amplifier |
| CGHV96130F | 130 W; 8.4 - 9.6 GHz; 50 ohm; Input/Output Matched GaN HEMT for X-Band Radar Applications |
| CGHV1J006D-GP4 | 6 W; 18.0 GHz; GaN HEMT Die |
| CMPA901A035 | 35 W; 9.0 - 10.0 GHz; 28 V; GaN MMIC for Radar Power Amplifiers |
| CGHV1A250 | 8.8 - 9.6 GHz, 250 W, 45 V, Packaged GaN Transistor |
| CMPA851A005S | 8.5 - 10.5 GHz, 4.5 W GaN High Power Amplifier |
| CGHV96050F2 | 50 W; 7.9 - 9.6 GHz; 50 ohm; Input/Output-Matched GaN HEMT |
| CMPA851A012 | 8.5 - 10.5 GHz, 20 W GaN MMIC HPA |
| CMPA901A020 | 9.0 - 10.0 GHz; 20 W; Packaged GaN MMIC Power Amplifier |
| CGHV96100 | 100 W; 7.9 - 9.6 GHz; 50 ohm; Input/Output-Matched; GaN HEMT Power Amplifier |
| CGHV1J070D-GP4 | 70 W; 18.0 GHz; GaN HEMT Die |
| WSM5100S | 8.5 - 10.5 GHz, 16W GaN T/R Module |
| CGHV1J025D-GP4 | 25 W; 18.0 GHz; GaN HEMT Die |
| CMPA851A025 | 8.5 - 10.5 GHz, 40 W GaN MMIC HPA |
| CMPA801B030 | 30 W; 7.9 - 11.0 GHz; GaN MMIC; Power Amplifier |
| CMPA9396025 | 25 W; 9.3 - 9.6 GHz GaN MMIC Power Amplifier |
| CMPA851A050 | 8.5 - 10.5 GHz GaN MMIC HPA |
| CGHV1F006 | 6 W; DC - 15.0 GHz; 40 V; GaN HEMT |