CGHV31500

500W, 2.7 - 3.1 GHz, GaN IMFET

The CGHV31500F1 is a gallium-nitride (GaN), fully matched IMFET housed in a thermally enhanced air cavity package. Operating at 50V, the device is capable of 500W of pulsed output power, with 2mS pulse lengths at 20% duty cycle.

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Product Specifications

Part Number: CGHV31500
Description: 500W, 2.7 - 3.1 GHz, GaN IMFET
Min Frequency(MHz): 2700
Max Frequency(MHz): 3100
Gain(dB): 12.7
Package Category: Flange

Features

650 W Typical Output Power
12 dB Power Gain
65% Typical Drain Efficiency
50 Ohm Internally Matched
<0.3 dB Pulsed Amplitude Droop

Technical Resources

Datasheet

Model Data (Sparameters)

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