CGH35060P2

60 W; 3100 - 3500 MHz; 28 V GaN HEMT

The CGH35060P2 is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) designed specifically for high-efficiency; high-gain and wide-bandwidth capabilities; which makes the CGH35060P2 ideal for 3.1 - 3.5-GHz; S-band; pulsed-amplifier applications. The transistor is supplied in a ceramic/metal flange and pill package.

Data Sheet Get a Sample Order Now Get a Quote Tech Support Product Inquiry Request Model

Product Specifications

Part Number: CGH35060P2
Description: 60 W; 3100 - 3500 MHz; 28 V GaN HEMT
Min Frequency(MHz): 3100
Max Frequency(MHz): 3500
Gain(dB): 12.0
Package Category: Flange, Pill

Features

3.1 – 3.5 GHz Operation
60 W Peak Power Capability
12 dB Small Signal Gain
60% Drain Efficiency

Technical Resources

Datasheet

CGH35060F1.pdf

Order from MACOM

CGH35060P2

60W, 3.5GHz, 830185P2, GaN HEMT, FLANGE

Order Get a Quote Get a Sample

Order from Distributor

Loading...