CGHV40050

50 W; DC - 4.0 GHz; 50 V; GaN HEMT

The CGHV40050 is an unmatched; gallium-nitride (GaN) high-electron-mobility transistor (HEMT). The CGHV40050; operating from a 50-volt rail; offers a general-purpose; broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high-efficiency; high-gain and wide-bandwidth capabilities; making the CGHV40050 ideal for linear and compressed amplifier circuits. The transistor is available in a 2-lead flange and pill package.

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Product Specifications

Part Number
CGHV40050
Description
50 W; DC - 4.0 GHz; 50 V; GaN HEMT
Min Frequency(MHz)
0
Max Frequency(MHz)
4000
Gain(dB)
16.0
Package Category
Flange, Pill

Features

  • Up to 4 GHz Operation
  • 77 W Typical Output Power
  • 17.5 dB Small Signal Gain at 1.8 GHz
  • CGHV40050
  • 53 % Efficiency at PSAT
  • 50 V Operation

Technical Resources

Datasheet

Model Data (Sparameters)

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CGHV40050
50 W; DC - 4.0 GHz; 50 V; GaN HEMT
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