CMPA0060025

25 W; DC - 6.0 GHz; GaN MMIC Power Amplifier

The CMPA0060025 is a gallium-nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide; including higher breakdown voltage; higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC enables very wide bandwidths to be achieved in a small-footprint.

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Product Specifications

Part Number
CMPA0060025
Description
25 W; DC - 6.0 GHz; GaN MMIC Power Amplifier
Min Frequency(MHz)
0
Max Frequency(MHz)
6000
Gain(dB)
18.0
Package Category
Flange, Die

Features

  • 18 dB Small Signal Gain
  • 30 W Typical PSAT
  • Operation up to 50 V
  • High Breakdown Voltage
  • High Temperature Operation

Technical Resources

Datasheet

Application Notes

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CMPA0060025D
DIE, MMIC, HPA, 25W, DC-6GHz, GaN HEMT,
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CMPA0060025F
MMIC, HPA, 25W, DC-6.0GHz, GaN, FLANGE,
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CMPA0060025F-AMP
AMPLIFIER ASSY, 20 - 6000MHz, INCLUDES C
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CMPA0060025F1
Amplifier, MMIC,HPA,25W,DC-6.0GHz,GaN
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CMPA0060025F1-AMP
AMPLIFIER ASSY, DC-6.0GHz
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