General Purpose Broadband 40 V
MACOM's GaN HEMT devices are ideal for ultra-broadband amplifier applications that benefit from a reduction of heat-sink requirements. The intrinsic properties of high-power density, low parasitic, and high FT, allow for multi-octave to instantaneous bandwidth amplifiers. This product family consists of packaged, discrete transistors and discrete bare die (designed for hybrid amplifiers and multi-function transmit/receive modules) from output powers 6 W to 70 W (CW) at 40 V that are suitable for DC – 18 GHz applications.
5 Items
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| 6 W; DC - 15.0 GHz; 40 V; GaN HEMT | 0 | 15000 | 6 | 7 | 52 | 40 | Packaged Discrete Transistor | Surface Mount | ||
| 25 W; DC - 15 GHz; 40 V; GaN HEMT | 0 | 15000 | 25 | 11 | 51 | 40 | Packaged Discrete Transistor | Surface Mount | ||
| 6 W; 18.0 GHz; GaN HEMT Die | 0 | 18000 | 6 | 17 | 60 | 40 | Discrete Bare Die | Die | ||
| 25 W; 18.0 GHz; GaN HEMT Die | 0 | 18000 | 25 | 17 | 60 | 40 | Discrete Bare Die | Die | ||
| 70 W; 18.0 GHz; GaN HEMT Die | 0 | 18000 | 70 | 17 | 60 | 40 | Discrete Bare Die | Die |