CGH40180

180 W RF Power GaN HEMT

The CGH40180PP is an unmatched; gallium-nitride (GaN) high-electron-mobility transistor (HEMT). The CGH40180PP; operating from a 28-volt rail; offers a general-purpose; broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency; high gain and wide bandwidth capabilities; making the CGH40180PP ideal for linear and compressed amplifier circuits. The transistor is available in a 4-lead flange package.

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Product Specifications

Part Number
CGH40180
Description
180 W RF Power GaN HEMT
Min Frequency(MHz)
0
Max Frequency(MHz)
3000
Gain(dB)
15.0
Package Category
Push-Pull

Features

  • Up to 2.5 GHz Operation
  • 20 dB Small Signal Gain at 1.0 GHz
  • 15 dB Small Signal Gain at 2.0 GHz
  • 220 W typical PSAT
  • 70 % Efficiency at PSAT
  • 28 V Operation

Technical Resources

Datasheet

Model Data (Sparameters)

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CGH40180
180 W RF Power GaN HEMT
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