CGH40090

90 W RF Power GaN HEMT

The CGH40090PP is an unmatched; gallium-nitride (GaN) high electron mobility transistor (HEMT). The CGH40090PP; operating from a 28 volt rail; offers a general purpose; broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency; high gain and wide bandwidth capabilities making the CGH40090PP ideal for linear and compressed amplifier circuits. The transistor is available in a 4-lead flange package.

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Product Specifications

Part Number
CGH40090
Description
90 W RF Power GaN HEMT
Min Frequency(MHz)
0
Max Frequency(MHz)
4000
Gain(dB)
14.0
Package Category
Push-Pull

Features

  • Up to 2.5 GHz Operation
  • 16 dB Small Signal Gain at 2.0 GHz
  • 100 W Typical PSAT
  • 55% Efficiency at PSAT
  • 28 V Operation

Technical Resources

Datasheet

Model Data (Sparameters)

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CGH40090PP
90W, 4.0GHz, 830134F, GaN HEMT, PUSH-PUL
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CGH40090PP-AMP
AMPLIFIER ASSY, 0.5-2.5 GHz, INCLUDES CG
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