General Purpose Broadband 28 V
MACOM's GaN HEMT devices are ideal for ultra-broadband amplifier applications that require high reliability and efficiency. The intrinsic properties of high-power density, low parasitic, and high FT, allow for multi-octave to instantaneous bandwidth amplifiers. This product family consists of packaged, unmatched discrete transistors from output powers 6 W to 240 W (CW) at 28 V and packaged 50-ohm MMIC amplifiers operating at 28 V suitable from DC – 18 GHz applications. This portfolio also includes bare discrete die and bare MMIC die designed for hybrid amplifiers and multi-function transmit/receive modules.
| Part Number | Description |
|---|---|
| CG2H80015D-GP4 | 15 W; 8.0 GHz ; GaN HEMT Die |
| CGH25120F | 120 W; 2300 - 2700 MHz; GaN HEMT for WiMAX and LTE |
| CGH55030 | 30 W; 5500 - 5800 MHz; 28 V; GaN HEMT for WiMAX |
| CMPA0530002 | 2 W; 0.5 - 3.0 GHz; Input Matched to 50 ohms, GaN MMIC for Pre-driver/Driver Amplifier Applications |
| CGH60060D-GP4 | 60 W; 6.0 GHz; GaN HEMT Die |
| CGH40120 | 120 W RF Power GaN HEMT |
| CGH60008D-GP4 | 8 W; 6.0 GHz; GaN HEMT Die |
| WST4200D | GaN-on-SiC Transistor, 30 W, 28 V, DC - 6 GHz |
| CGH27030 | 30 W, DC - 6.0 GHz, 28 V, GaN HEMT |
| CG2H40035 | 35 W RF Power GaN HEMT |
| CMPA1842040 | 1.8 - 4.2 GHz, 45 W GaN MMIC HPA |
| CGH27060F | 8 W (average); 28 V; GaN HEMT for linear communications ranging from VHF to 3 GHz |
| CGH60030D-GP4 | 30 W; 6.0 GHz; GaN HEMT Die |
| CGH40045 | 45 W RF Power GaN HEMT |
| CMPA601C025 | 40 W; 6.0 - 12.0 GHz; GaN MMIC; Power Amplifier |
| WST4500D | GaN-on-SiC Transistor, 60 W, 28 V, DC - 4 GHz |
| CG2H40010 | 10 W RF Power GaN HEMT |
| CGH40010 | 10 W RF Power GaN HEMT |
| CGH35015 | 15 W; 3300 - 3900 MHz; 28 V; GaN HEMT for WiMAX |
| CMPA0560008 | MMIC Power Amplifier, 10 W, 0.5 - 6 GHz |
| CGH60015D-GP4 | 15 W; 6.0 GHz; GaN HEMT Die |
| WST4050D | GaN-on-SiC Transistor, 10 W, 28 V, DC - 8 GHz |
| CMPA601J025 | 6 - 18 GHz, 25W GaN MMIC HPA |
| CGHV35060MP | 60 W; 2700 to 3800 MHz; 50 V; GaN HEMT for S-Band Radar and LTE Base Stations |
| CG2H80030D-GP4 | 30 W; 8.0 GHz; GaN HEMT Die |
| CMPA2560025 | 25 W; 2.5 - 6.0 GHz; GaN MMIC Power Amplifier |
| CGH27015 | 15 W; 28 V; GaN HEMT for Linear Communications ranging from VHF to 3 GHz |
| CGH60120D-GP4 | 120 W; 6.0 GHz; GaN HEMT Die |
| CG2H80045D-GP4 | 45 W, 8.0 GHz, GaN HEMT Die |
| CG2H40025 | 25 W RF Power GaN HEMT |
| CMPA0060002 | 2 W; 20 MHz - 6000 MHz; GaN MMIC Power Amplifier |
| CGH27015P | 15 W, 28 V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz |
| CMPA2735075 | 75 W, 2.7 - 3.5 GHz, GaN MMIC Power Amplifier |
| CGH40180 | 180 W RF Power GaN HEMT |
| CG2H80120D-GP4 | 120 W; DC - 8000 MHz; 28 V; GaN HEMT Die |
| WST4100D | GaN-on-SiC Transistor, 15 W, 28 V, DC - 8 GHz |
| CGH35060P1 | 60 W; 3300 - 3600 MHz; 28 V; GaN HEMT for WiMAX |
| CMPA0760020 | 0.7 - 6.0 GHz, 25W GaN MMIC HPA |
| CG2H40045 | 45 W RF Power GaN HEMT |
| CG2H40120 | 120 W; RF Power GaN HEMT |
| CGH40006 | 6 W RF Power GaN HEMT |
| CMPA2060035 | 35 W; 2.0 - 6.0 GHz; 28V; GaN MMIC Power Amplifier |
| CG2H80060D-GP4 | 60 W; 8.0 GHz; GaN HEMT Die |
| WST41H0D | GaN-on-SiC Transistor, 120 W, 28 V, DC - 4 GHz |
| CGH40035 | 35 W RF Power GaN HEMT |
| WST4300D | GaN-on-SiC Transistor, 45 W, 28 V, DC - 6 GHz |
| CGH21240 | 240 W; 1800 - 2300 MHz; GaN HEMT for WCDMA; LTE; WiMAX |
| CGH40025 | 25 W RF Power GaN HEMT |
| CGH40090 | 90 W RF Power GaN HEMT |
| CMPA2060040D1 | GaN High Power Amplifier, 40 W 2.0 -6.0 GHz |