WST4050D

GaN-on-SiC Transistor, 10 W, 28 V, DC - 8 GHz

The WST4050D is a gallium nitride (GaN) high electron mobility transistor (HEMT). GaN has superior properties compared to silicon or gallium  arsenide, including higher breakdown voltage,  higher saturated electron drift velocity, and higher  thermal conductivity. GaN HEMTs offer greater  power density and wider bandwidths compared to Si  and GaAs transistors. 

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Product Specifications

Part Number
WST4050D
Description
GaN-on-SiC Transistor, 10 W, 28 V, DC - 8 GHz
Min Frequency(MHz)
0
Max Frequency(MHz)
8000
Gain(dB)
17

Features

  • 17 dB Small Signal Gain at 4 GHz
  • 10 W PSAT
  • 28 V Operation
  • High Breakdown Voltage
  • High Temperature Operation
  • Up to 8 GHz Operation
  • High Efficiency

Applications

  • 2-Way Private Radio
  • Broadband Amplifiers
  • Cellular Infrastructure
  • Test and Instrumentation
  • Class A, AB
  • OFDM; W-CDMA; EDGE; CDMA waveforms
  • Radar applications
  • Electronic Warfare

Technical Resources

Datasheet

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WST4050D
GaN-on-SiC Transistor, 10 W, 28 V, DC - 8 GHz
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