WST41H0D
GaN-on-SiC Transistor, 120 W, 28 V, DC - 4 GHz
The WST41H0D is a gallium nitride (GaN) high electron mobility transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs offer greater power density and wider bandwidths compared to Si and GaAs transistors.
Product Specifications
- Part Number
- WST41H0D
- Description
- GaN-on-SiC Transistor, 120 W, 28 V, DC - 4 GHz
- Min Frequency(MHz)
- 0
- Max Frequency(MHz)
- 4000
- Peak Output Power(W)
- 120
- Gain(dB)
- 15
Features
- Small Signal Gain: 15 dB @ 4 GHz
- PSAT: 120 W
- 28 V Operation
- High Breakdown Voltage
- High Temperature Operation
- Up to 4 GHz Operation
- High Efficiency
Applications
- 2-Way Private Radio
- Broadband Amplifiers
- Cellular Infrastructure
- Test and Instrumentation
- Class A, AB
- OFDM; W-CDMA; EDGE; CDMA waveforms
- Radar applications
- Electronic Warfare