Products
MACOM’s European Semiconductor Center offers a portfolio of MMIC products up to 110 GHz.
MACOM’s European Semiconductor Center offers a comprehensive portfolio of MMIC products fabricated on high performance gallium nitride-on-silicon (GaN-on-Si) and gallium arsenide (GaAs) processes. These technologies allow the delivery of MMIC solutions covering DC to 110GHz. The portfolio of products below are offered as bare die, tabbed and packaged MMIC solutions.
Power Amplifiers
The power amplifier (PA) portfolio is designed and optimized for use in telecommunications, instrumentation, radar, satcom and A&D applications. Our PAs are fabricated using captive short gate length GaAs and GaN-on-Si technology that allows MACOM to deliver differentiated amplifier performance.
| Product | Freq. Min (GHz) | Freq. Max (GHz) | Gain (dB) | (dBm) | PAE (%) | BIAS Currant (A) | Drain Voltage (V) | Package | Board | Process |
|---|---|---|---|---|---|---|---|---|---|---|
| CGY2135UH/C1 | 18 | 23 | 25 | 33 | 20.2 | 1.2 | 4 | Die | Yes | D01PH |
|
27 |
31 |
22 |
40.5 |
22 |
0.93 |
12 |
Die |
Yes |
D01GH |
|
|
32 |
38 |
20 |
40 |
28 |
0.7 |
12 |
Die |
Yes |
D01GH |
|
|
6 |
18 |
20 |
40.5 |
33 |
1.0 |
12 |
Die |
Yes |
D01GH |
|
| MAAP-011420-DIE | 1 | 40 | 15 | 30.0 | 15 | 220 | 18 | Die | Yes | D01GH |
Low Noise Amplifiers
The LNA portfolio is manufactured using pHEMT and mHEMT technologies (ED02AH, D01PH(S), D01MH). MACOM mHEMT LNAs deliver superior noise figure performance up to 110GHz. LNAs fabricated on GaN-on-Si technology are also offered. The higher breakdown voltage and low noise performance makes GaN-on-Si an ideal technology for developing higher power LNAs. GaN-on-Si LNAs have demonstrated survivability with high input power and fast recovery.
| PRODUCT | Freq. Min (GHz) | Freq. Max (GHz) | GAIN (dB) | NF (dB) | OP1dB (dBm) | BIAS Current (mA) | BIAS Voltage (V) | Package | Board | Process |
|---|---|---|---|---|---|---|---|---|---|---|
| CGY2106XHV | 0.1 | 3 | 19 | 0.45 | 35 | 100 | 5 | QFN 4x4 | D01PH | |
| CGY2105XHV | 0.5 | 4 | 19 | 0.42 | 35 | 100 | 5 | QFN 4x4 | D01PH | |
| CGY2107HV | 0.5 | 6 | 24 | 0.5 | 36 | 100 | 5 | QFN 4x4 | ED02AH | |
| CGY2108GS | 0.5 | 6 | 21 | 0.6 | 36 | 100 | 5 | Hermetic Glass Seal | Yes | ED02AH |
| CGY2108HV | 0.5 | 6 | 22 | 0.5 | 36 | 100 | 5 | QFN 4x4 | D01PH | |
| CGY2220UH/C1 | 1 | 12 | 35 | 1.3 | 12 | 52 | 1.5 | Die | D007IH | |
| CGY2230UH/C1 | 1 | 18 | 35 | 1.5 | 12 | 50 | 1.5 | Die | D007IH | |
| CGY2178UH/C1 | 5 | 6 | 30 | 1 | 15 | 40 | 3 | Die | ED02AH | |
| CGY2120XUH/C1 | 5 | 7 | 13 | 0.5 | 12 | 50 | 1 | Die | ||
| CGY2290SUH/C1 | 6 | 18 | 9 | 3.3 | 13 | 33 | 5 | Die | ED02AH | |
| CGY2221HV/C1 | 7.5 | 13 | 16 | 1.6 | 17 | 82 | 5 | QFN 4x4 | D01PH | |
| CGY2124UH/C1 | 8 | 12 | 33 | 1.1 | 11 | 55 | 5 | Die | Yes | D01PH |
| CGY2221UH/C1 | 8 | 12 | 16 | 1.6 | 17 | 82 | 5 | Die | D01PH | |
| CGY2232UH/C1 | 12 | 15 | 27 | 1.3 | 0 | 50 | 3 | Die | ||
| CGY2125AUH/C1 | 13 | 15 | 25 | 1 | 8 | 20 | 3.3 | Die | D01MH | |
| CGY2121XUH/C2 | 18 | 26 | 19 | 1.5 | 5 | 60 | 0.8 | Die | Yes | D007IH |
| CGY2128UH/C2 | 24 | 34 | 24 | 1.3 | 11 | 47 | 3.5 | Die | D01MH | |
| CGY2260UH/C1 | 25 | 43 | 25.5 | 1.7 | 6 | 50 | 1.5 | Die | Yes | D007IH |
| CGY2122XUH/C2 | 25 | 43 | 32 | 1.5 | 1 | 30 | 1.1 | Die | Yes | D007IH |
| CGY2272UH | 44 | 70 | 25 | 2 | 5 | 40 | 1.1 | Die | Yes | D007IH |
| CGY2190UH/C2 | 75 | 110 | 23 | 2.8 | 1 | 33 | 1 | Die | D007IH | |
|
8 |
12 |
20 |
1.4 |
15 |
150 |
8 |
Die |
Yes |
D01GH |
|
|
24 |
34 |
18 |
1.6 |
5 |
50 |
8 |
Die |
Yes |
D01GH |
|
| 27 | 31.5 | 27 | 1.3 | 5 | 47 | 1.5 | Die | |||
| 22 | 48 | 27 | 1.5 | 5 | 50 | 1.5 | Die | |||
| MAAL-011258 | 13 | 15 | 27 | 1.7 | 4 | 29 | 3 | QFN 4x20 | ||
| MAAL-011272 | 8 | 12 | 33 | 1.5 | 10 | 50 | 5 | PQFN |
Wideband Amplifiers
The wideband amplifier portfolio is manufactured using 130 nm gate length GaAs pHEMT technology D01PH(S) or 100 nm GaN HEMT technology D01GH. These products are designed for test and measurement, A&D, and optical communications applications.
| PRODUCT | Freq. Min (GHz) | Freq. Max (GHz) | Gain (dB) | NF (dB) | P1dB OUT (dBm) | Supply Current (A) | Supply Voltage (V) | Package | Process |
|---|---|---|---|---|---|---|---|---|---|
| CGY2141UH/C1 | 0.01 | 46 | 16 | 4 | 21 | 195 | 5 | Die | D01PH |
| CGY2144UH/C2 | 0.01 | 54 | 13 | 2.5 | 15 | 100 | 5 | Die | D01PH |
| CGY2145UH/C1 | 0.5 | 45 | 13 | 2.6 | 18 | 85 | 5 | Die | D01PH |
| CGY2160UH/C1 | 1.5 | 47 | 15 | 2.5 | 19 | 103 | 5 | Die | D01PH |
Gain Block Amplifiers
The gain block amplifiers portfolio is designed for industrial, wireless infrastructure and A&D applications. These gain block amplifiers are manufactured using GaAs technology (D01PH(S)).
| PRODUCT | Freq. Min (GHz) | Freq. Max (GHz) | Gain (dB) | NF (dB) | Psat (dBm) | Package | Process |
|---|---|---|---|---|---|---|---|
| CGY2731UH/C1 | 12 | 15 | 19 | 4 | 10 | Die | D01PH |
Corechips (PS + ATT)
Core chips integrate digital phase shifter, digital attenuator, LNAs, MPAs and switches for phased array antenna applications. Phase and gain are controlled through a serial to parallel interface on the die (SIPO).
| Product | Access | Freq. Min (GHz) | Freq. Max (GHz) | Interface | BITS | RMS | Attentuation / Phase Range | Package | Board | Process |
|---|---|---|---|---|---|---|---|---|---|---|
| CGY2175AHV/C1 | 3 ports | 4.5 | 6.5 | CMOS, Serial | 6 | 0.5 dB / 2° | 31.5 dB / 360° | QFN 7x7 | Yes | ED02AH |
| CGY2175AUH/C1 | 3 ports | 4.5 | 6.5 | CMOS, Serial | 6 | 0.2 dB / 1.3° | 31.5 dB / 360° | Die | Yes | ED02AH |
| CGY2170YHV/C1 | 3 ports | 8 | 12 | CMOS, Serial | 6 | 0.5 dB / 4° | 31.5 dB / 360° | QFN 7x7 | Yes | ED02AH |
| CGY2170YUH/C1 | 3 ports | 8 | 12 | CMOS, Serial | 6 | 0.4 dB / 3° | 31.5 dB / 360° | Die | Yes | ED02AH |
| CGY2330UH/C1 | 2 Ports | 12 | 15 | Serial | 6 | 0.5 dB / 11.25° | 15 dB / 348.8° | Die | ED02AH | |
| CGY2351UH/C1 | 2 Ports | 26.5 | 30.5 | Serial | 6 | 0.5 dB / 4° | 22 dB / 360° | Die | ED02AH | |
| CGY2350UH/C1 | 2 Ports | 34 | 36 | Serial | 5 | 0.5 dB / 5° | 15 dB / 348.8° | Die | Yes | ED02AH |
RX Corechips
| PRODUCT | Function | Freq. Min (GHz) | Freq. Max (GHz) | Gain (dB) | NF (dB) | OP1dB (dBm) | BITS | Phase Error RMS (°) | Package | Process |
|---|---|---|---|---|---|---|---|---|---|---|
| CGY2179HV/C1 | 4 bits PS+LNA | 10.7 | 12.75 | 12 | 2 | 3 | 4 | 7 | QFN | ED02AH |
| CGY2179UH/C1 | 4 bit PS+LNA | 10.7 | 12.75 | 12 | 2 | 3 | 4 | 7 | Die | ED02AH |
True Time Delay
True time delay functions, with 1-bit and 5-bit control, operating from 6 to 18 GHz and with delays from 10ps to 330 ps are also offered in the portfolio.
| PRODUCT | Freq. Min (GHz) | Freq. Max (GHz) | BITS | Min Delay (ps) | Full Delay (ps) | Isertion Loss (dB) | CTRL Interface (V) | Package | Board | Process |
|---|---|---|---|---|---|---|---|---|---|---|
| CGY2393SUH/C1 | 6 | 18 | 5 | 10 | 310 | 6 | 0 / +4 | Die | Yes | ED02AH |
| CGY2394SUH/C1 | 6 | 18 | 1 | 330 | 330 | 6 | 0 / +4 | Die | Yes | ED02AH |
Digital Phase Shifter
Digital phase shifters from 4.8 GHz to 18 GHz manufactured using the ED02AH GaAs pHEMT process are also offered. Phase shifters are designed for communications, and A&D applications.
| Product | Freq. Min (GHz) | Freq. Max (GHz) | Phase Control (°) | Insertion Loss (dB) | IP1dB (dBm) | BITS | Phase Error RMS (°) | Interface | Package | Board | Process |
|---|---|---|---|---|---|---|---|---|---|---|---|
| CGY2177AUH/C1 | 4.8 | 6.8 | 360 | 5 | 20 | 6 | 2 | 0 / +5 V | Die | ED02AH | |
| CGY2173UH/C2 | 6 | 18 | 360 | 13 | 27 | 6 | 4 | 0 / -3 V | Die | Yes | ED02AH |
| CGY2392SHV/C1 | 6 | 18 | 360 | 10.8 | 20 | 6 | 1.09 | 0 / +5 V | QFN 5x5 | ED02AH | |
| CGY2392SUH/C1 | 6 | 18 | 360 | 10.8 | 20 | 6 | 1.7 | 0 / +5 V | Die | Yes | ED02AH |
| CGY2172XBUH/C1 | 8 | 12 | 360 | 8 | 18 | 6 | 3 | 0 / +5 V | Die | ED02AH | |
| CGY2174UH/C1 | 14 | 16 | 360 | 8 | 20 | 6 | 6 | 0 / -3 V | Die | ED02AH |
Digital Attenuator
Attenuators from 1 to 18 GHz manufactured using the ED02AH GaAs pHEMT process are also offered.
| Product | Freq. Min (GHz) | Freq. Max (GHz) | Amplitude Control (dB) | Insertion Loss (dB) | IP1dB (dBm) | BITS | RMS Atten. (dB) | CTRL Interface (V) | Package | Process |
|---|---|---|---|---|---|---|---|---|---|---|
| CGY2171XBUH/C1 | 1 | 15 | 31.5 | 5 | 20 | 6 | 0.25 | 0 / +3 V | Die | ED02AH |
| CGY2176AUH/C1 | 1 | 8 | 31.5 | 5.6 | - | 6 | 0.2 | 0 / +5 V | Die | ED02AH |
| CGY2390SUH/C1 | 6 | 18 | 35 | 2.2 | - | 3 | 0.2 | 0 / +5 V | Die | ED02AH |
| CGY2169UH/C1 | 10 | 18 | 23.5 | 4 | 20 | 6 | 0.4 | 0 / -3 V | Die | ED02AH |
Switches
Switches include discrete components from single-pole-single-throw (SPST) to single-pole-dual-throw (SPDT). These switch products showcase high isolation, low loss and large power handling. They are designed using GaAs or GaN HEMT technologies.
| Product | Freq. Min (GHz) | Freq. Max (GHz) | Isolation(dB) | Insertion Loss (dB) | Switching Speed (ns) | Package | Process |
|---|---|---|---|---|---|---|---|
| CGY2890SUH/C1 | 6 | 18 | > 50 | 1.5 | Die | ED02AH |
Wideband Mixers
Wideband mixers that are manufactured using GaAs 180 nm E/D pHEMT (ED02AH) and 70 nm mHEMT (D007IH) technologies are also offered. These wideband mixers feature high isolation and are designed for radar, telecommunications and instrumentation applications.
| Product | Converter | Freq. Min (GHz) | Freq. Max (GHz) | LO Freq (GHz) | IF Freq (GHz) | LO Input Power (dBm) | Conv. Gain (dB) | OP1dB (dBm) | Package | Process |
|---|---|---|---|---|---|---|---|---|---|---|
| CGY2183UH/C1 | Active Down | 0.1 | 6 | 0.1 - 6 | DC - 3 | -5 | 11 | -5 | Die | ED02AH |
| CGY2184UH/C1 | Active Down | 0.1 | 6 | 0.1 - 6 | DC - 3 | 0 | 18 | 3 | Die | ED02AH |
| CGY2180UH/C1 | Up & Down | 0.7 | 3.7 | 0.7 - 4 | DC - 2 | 12 | -7 | 5 | Die | ED02AH |
| CGY2181UH/C1 | Up & Down | 1 | 4.5 | 1 - 5 | DC - 2 | 15 | -7 | 6 | Die | ED02AH |
| CGY2182UH/C1 | Up & Down | 3 | 10 | 3 - 10 | DC - 3 | 15 | -7 | 5 | Die | ED02AH |
Transimpedance Amplifiers
The portfolio includes transimpedance amplifiers (TIAs) supporting data rates up to 43 Gb/s for optical fiber communications applications.
| PRODUCT | Function | DATA RATE (Gb/s) | DIFF GAIN (dBΩ) | INPUT OVER-LOAD (mApp) | ON CHIP AGC | CURRENT (mA) | POWER SUPPLY (V) | Package | Board | Status | Process |
|---|---|---|---|---|---|---|---|---|---|---|---|
| CGY2144UH/C2 | TIA | 43 | 49 | 3.5 | No | 100 | 5 | Die | Prod | D01PH |