XX1007-BD
Doubler
MACOM’s 13.5-17.0 / 27.0-34.0 GHz GaAs MMIC doubler integrates a gain stage, passive doubler and driver amplifier onto a single device. The XX1007-BD has a self-biased architecture requiring a single positive supply (+5V) only and integrated on-chip bypassing capacitor eliminating the need for external capacitor. This MMIC uses MACOM’s GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has integrated ESD structures for protection and surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Millimeter wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications.
Product Specifications
- Part Number
- XX1007-BD
- Description
- Doubler
- Min Input Frequency(MHz)
- 13500
- Max Input Frequency(MHz)
- 17000
- Min Output Frequency(MHz)
- 27000
- Max Output Frequency(MHz)
- 34000
- Input Power(dBm)
- 8.0
- Mulitply Factor
- 2
- Package
- DIE
- Package Category
- Die
Features
- Integrated Gain, Doubler and Driver Stages
- RoHS* Compliant
- 260°C Reflow Compatible
- 100% Visual Inspection to MIL-STD-883 Method 2010
- 100% On-Wafer RF, DC & Output Power Testing
- On-Chip ESD Protection
- 40.0 dBc Fundamental Suppression
- +21.0 dBm Output Saturated Power
- Self-biased Architecture