XP1080-QU
Amplifier
The XP1080-QU is a four stage 37.0-40.0 GHz packaged GaAs MMIC power amplifier that has a small signal gain of 25.0 dB with a +38.0 dBm Output Third Order Intercept. The amplifier contains an integrated, temperature compensated, on-chip power detector. This MMIC uses M/A-COM Technology Solutions’ GaAs pHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The device comes in a RoHS compliant 7x7mm QFN Surface Mount Package offering excellent RF and thermal properties. This device has been designed for use in 38 GHz Point-to-Point Microwave Radio applications.
Product Specifications
- Part Number
- XP1080-QU
- Description
- Amplifier
- Min Frequency(MHz)
- 37000
- Max Frequency(MHz)
- 40000
- Gain(dB)
- 25.0
- Output P1dB(dBm)
- 27.00
- PSAT(dBm)
- 29
- OIP3(dBm)
- 38.0
Features
- Linear Power Amplifier
- 260°C Reflow Compatible
- RoHS* Compliant
- Lead-Free 7 mm 28-lead SMD Package
- +38.0 dBm OIP3
- +27.0 dBm P1dB Compression Point
- 25.0 dB Small Signal Gain
- Output Power Adjust
- On-Chip Power Detector