XP1017-BD
Power Amplifier
MACOM's two stage 30.0-36.0 GHz GaAs MMIC power amplifier is optimized for linear operation with a third order intercept point of +33.0 dBm. The device also includes Lange couplers to achieve good input/output return loss and an on-chip temperature compensated output power detector. This MMIC uses Mimix Broadband’s GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications.
Product Specifications
- Part Number
- XP1017-BD
- Description
- Power Amplifier
- Min Frequency(MHz)
- 30000
- Max Frequency(MHz)
- 36000
- Gain(dB)
- 16.0
- Output P1dB(dBm)
- 24.00
- OIP3(dBm)
- 33.0
- Bias Current(mA)
- 440
Features
- Balanced Design Provides Good Input/Output Match
- 100% Visual Inspection to MIL-STD-883Method 2010Frequency
- 100% On-Wafer RF, DC and Output Power Testing
- +33.0 dBm Third Order Intercept (OIP3)
- 16.0 dB Small Signal Gain
- On-Chip Temperature Compensated Output Power Detector