XL1010-BD
Low Noise Amplifier
MACOM’s three stage 20.0-38.0 GHz GaAs MMIC low noise amplifier has a small signal gain of 17.0 dB with a noise figure of 3.0 dB. The device uses MACOM’s GaAs pHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The device is well suited to multiple receiver applications which require broadband performance with simple bias requirements.
Product Specifications
- Part Number
- XL1010-BD
- Description
- Low Noise Amplifier
- Min Frequency(MHz)
- 20000
- Max Frequency(MHz)
- 38000
- Gain(dB)
- 17.0
- Bias Current(mA)
- 45
- NF(dB)
- 3.0
- Package
- DIE
- Package Category
- Die/Bumped Die
Features
- 17.0 dB Small Signal Gain
- RoHS* Compliant
- 260°C Reflow Compatible
- 100% On-Wafer RF Testing
- Single, Positive Bias Supply
- 3.0 dB Noise Figure