XL1002-BD
Low Noise Amplifier
MACOM’s three stage balanced 20.0-36.0 GHz GaAs MMIC low noise amplifier has a small signal gain of 23.0 dB with a noise figure of 2.6 dB across the band. This MMIC uses MACOM’s GaAs pHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications.
Product Specifications
- Part Number
- XL1002-BD
- Description
- Low Noise Amplifier
- Min Frequency(MHz)
- 20000
- Max Frequency(MHz)
- 36000
- Gain(dB)
- 23.0
- Output P1dB(dBm)
- 4.00
- OIP3(dBm)
- 16.0
- Bias Current(mA)
- 85
- NF(dB)
- 2.6
- Package
- DIE
- Package Category
- Die/Bumped Die
Features
- Balanced Design
- 260°C Reflow Compatible
- 100% Visual Inspection to MIL-STD-883 Method 2010
- 100% On-Wafer RF, DC and Noise Figure Testing
- 2.6 dB Noise Figure
- 23.0 dB Small Signal Gain
- Self-biased Architecture
- Excellent Input/Output Match
- RoHS* Compliant