XB1006-BD
Buffer Amplifier
MACOM’s three stage 18.0-38.0 GHz GaAs MMIC buffer amplifier has a small signal gain of 21.0 dB with a positive gain slope, and a noise figure of 3.2 dB across the band. This MMIC uses MACOM’s GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications.
Product Specifications
- Part Number
- XB1006-BD
- Description
- Buffer Amplifier
- Min Frequency(MHz)
- 18000
- Max Frequency(MHz)
- 38000
- Gain(dB)
- 21.0
- Output P1dB(dBm)
- 15.00
- OIP3(dBm)
- 25.0
- Bias Current(mA)
- 50
- NF(dB)
- 3.2
Features
- High Dynamic Range/Positive Gain Slope
- RoHS* Compliant
- 100% Visual Inspection to MIL-STD-883 Method 2010
- 100% On-Wafer RF, DC and Noise Figure Testing
- +15 dBm P1dB Compression Point at Power Bias
- 3.2 dB Noise Figure at Low Noise Bias
- 21.0 dB Small Signal Gain
- Low Noise or Power Bias Configurations
- Excellent LO Driver/Buffer Amplifier
- 260°C Reflow Compatible
Technical Resources
Datasheet
Model Data (Sparameters)
Application Notes
- S-Parameter S2P File Format Guide
- Known Good Die Delivery Specification
- Tape and Reel Packaging for Surface Mount Components
- Bonding, Handling, and Mounting Procedures for Millimeterwave PHEMT MMICs
- RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
- AN-0004357 - Low Cost Active Bias Circuit for GaAs FET Amplifiers and Data Spreadsheet