WSDC2642
High Power RF GaN Amplifier, 125 W, 48 V, 2496 - 2690 MHz
The WSDC2642 GaN on Silicon Carbide HEMT amplifier designed for base station applications. The device is optimized for the frequency band of 2496 to 2690 MHz. This device supports pulsed and linear operation. Product is housed in an over-molded 7.0 x 6.5 mm DFN package. The WSDC2640 GaN-on-SiC HEMT Amplifier is designed for base station applications and optimized for 2.496 - 2.690 GHz modulated signal operation. This device supports pulsed and linear operation with peak output power levels to 70 W (48.5 dBm) in a 6.5 x 7.0 mm DFN package.
Product Specifications
- Part Number
- WSDC2642
- Description
- High Power RF GaN Amplifier, 125 W, 48 V, 2496 - 2690 MHz
- Min Frequency(MHz)
- 2496
- Max Frequency(MHz)
- 2690
- Supply Voltage(V)
- 48
- PSAT Watt(W)
- 125.0
- Gain(dB)
- 17.3
- Efficiency
- 57
- Test Freq(GHz)
- 2.70
- Package
- 7.0 x 6.5 mm DFN
- PSAT(dBm)
- 42
Features
- GaN-on-SiC HEMT Technology
- Designed for Digital Predistortion Error Correction Systems
- High Terminal Impedances for Broadband Performance
- 41.7 dBm Average Output Power
- 125 W Peak Output Power
- 100% DC and RF Tested
- RoHS* Compliant