WGC27630
Thermally Enhanced GaN Amplifier 600 W, 48 V, 2620 - 2690 MHz
The WGC27630 is a 600 W (P4dB) GaN-on-SiC HEMT Amplifier designed for 5G base station application and optimized for 2620 - 2690 MHz modulated signal operation. It features high efficiency, and a thermally enhanced package with earless flange.
Product Specifications
- Part Number
- WGC27630
- Description
- Thermally Enhanced GaN Amplifier 600 W, 48 V, 2620 - 2690 MHz
- Min Frequency(MHz)
- 2620
- Max Frequency(MHz)
- 2690
- Supply Voltage(V)
- 48
- PSAT Watt(W)
- 600.0
- Gain(dB)
- 14.6
- Test Freq(GHz)
- 2.62
- PSAT(dBm)
- 58
Features
- Optimized for Cellular Base Station Applications
- GaN-on-SiC HEMT Technology
- 48 V Operation
- Pulsed CW Performance: 2655 MHz, 48 V, 40 μs Pulse Width, 10% Duty Cycle, Combined Outputs
- Output Power @ P4dB = 600 W
- Efficiency @ P4dB = 68%
- Thermally Enhanced Package with Earless Flange
- 100 % RF Tested
- RoHS* Compliant