WGC26420
Thermally Enhanced GaN Amplifier 400 W, 48 V, 2620 - 2690 MHz
The WGC26420 is a 400 W (P4dB) GaN-on-Silicon Carbide HEMT Amplifier designed for use in multi-standard cellular power amplifier applications. It features optimized operation from 2620 - 2690 MHz and a thermally-enhanced over-molded plastic package.
Product Specifications
- Part Number
- WGC26420
- Description
- Thermally Enhanced GaN Amplifier 400 W, 48 V, 2620 - 2690 MHz
- Min Frequency(MHz)
- 2620
- Max Frequency(MHz)
- 2690
- Supply Voltage(V)
- 48
- PSAT Watt(W)
- 400.0
- Gain(dB)
- 16.6
- Efficiency
- 53.6
- Test Freq(GHz)
- 2.62
- Package
- TO248-6L
- PSAT(dBm)
- 56
Features
- GaN-on-SiC HEMT Technology
- Pulsed CW Performance: 2655 MHz, 48 V, 40 µs Pulse Width, 10% Duty Cycle, Combined Outputs
- Output Power @ P4dB = 400 W
- Efficiency @ P4dB = 65%
- RoHS* Compliant