WGC22630
Thermally Enhanced GaN Amplifier 630 W, 48 V, 2110 - 2200 MHz
The WGC22630 is a 630 W (P4dB) GaN-on-Silicon Carbide HEMT Amplifier designed for use in multi-standard cellular power amplifier applications. It features optimized operation from 2110 - 2200 MHz and a thermally-enhanced over-molded plastic package.
Product Specifications
- Part Number
- WGC22630
- Description
- Thermally Enhanced GaN Amplifier 630 W, 48 V, 2110 - 2200 MHz
- Min Frequency(MHz)
- 2110
- Max Frequency(MHz)
- 2200
- Supply Voltage(V)
- 48
- PSAT Watt(W)
- 85.0
- Gain(dB)
- 16.5
- Package
- TO288-8L
- PSAT(dBm)
- 49
- Package Category
- Plastic
Features
- GaN-on-SiC HEMT Technology
- Pulsed CW Performance: 2155 MHz, 48 V, 40 µs Pulse Width, 10% Duty Cycle, Combined Outputs
- Output Power @ P4dB = 630 W
- Efficiency @ P4dB = 68%
- RoHS* Compliant