PH3135-65M
Radar Pulsed Power Transistor 65W, 3.1-3.5 GHz, 100µs Pulse, 10% Duty
Radar Pulsed Power Transistor 65W, 3.1-3.5 GHz, 100µs Pulse, 10% Duty
Product Specifications
- Part Number
- PH3135-65M
- Description
- Radar Pulsed Power Transistor 65W, 3.1-3.5 GHz, 100µs Pulse, 10% Duty
- Min Frequency(MHz)
- 3100
- Max Frequency(MHz)
- 3500
- Pout(W)
- 65.00
- Gain(dB)
- 7.50
- Efficiency(%)
- 35
- Type
- Bipolar
- Package
- Flange Ceramic Pkg
- Package Category
- Ceramic Flange Mount
Features
- NPN Silicon Microwave Power Transistors
- RoHS Compliant
- Hermetic Metal/Ceramic Package
- Internal Input and Output Impedance Matching
- Gold Metallization System
- High Efficiency Inter-Digitized Geometry
- Diffused Emitter Ballasting Resistor
- Broadband Class C Operation
- Common Base Configuration
Technical Resources
Datasheet
Application Notes
- S-Parameter S2P File Format Guide
- Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
- RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
- Transistor Mounting and Soldering
- Recommendations For Long-Term Transistor Storage
- Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)