NPTB00025C
GaN Power Transistor, 28 V, 25 W DC - 4 GHz
This part has been discontinued. The suggested replacement part is: CGH27030F / CGH27030P
The NPTB00025C GaN HEMT is a power transistor optimized for DC - 4 GHz operation. This device supports CW, pulsed, and linear operation with output power levels to 25 W. This transistor is assembled in an industry standard surface mount plastic package.
Discontinued: Not recommended for new designs.
Product Specifications
- Part Number
- NPTB00025C
- Description
- GaN Power Transistor, 28 V, 25 W DC - 4 GHz
- Min Frequency(MHz)
- 0
- Max Frequency(MHz)
- 4000
- Supply Voltage(V)
- 28
- PSAT Watt(W)
- 25.0
- Gain(dB)
- 13.0
- Test Freq(GHz)
- 3.00
- Package
- AC-200B-2
Features
- Optimized for Broadband Operation (DC - 4 GHz)
- 25 W P3dB CW Narrowband Power
- 10 W P3dB CW Broadband Power (0.05 - 1 GHz)
- Characterized for Operation up to 32 V
- 100% RF Tested
- Thermally-Enhanced Surface Mount Package
- High Reliability Gold Metallization Process
- Subject to EAR99 Export Control
- RoHS* Compliant
Applications
- Defense Communications
- land mobile radio
- Avionics
- Wireless Infrastructure
- ISM
- VHF/UHF/L-Band Radar