NPT1004D
GaN Amplifier 28 V, 45 W, DC - 4 GHz
The NPT1004 GaN HEMT is a power transistor optimized for DC - 4 GHz operation. This device supports CW, pulsed, and linear operation with output power levels to 45 W. This transistor is assembled in an industry standard surface mount plastic package.
Product Specifications
- Part Number
- NPT1004D
- Description
- GaN Amplifier 28 V, 45 W, DC - 4 GHz
- Min Frequency(MHz)
- 0
- Max Frequency(MHz)
- 4000
- Supply Voltage(V)
- 28
- PSAT Watt(W)
- 45.0
- Gain(dB)
- 13.0
- Efficiency
- 55
- Test Freq(GHz)
- 2.50
- Package
- SOIC8NE
- PSAT(dBm)
- 47
- Package Category
- Plastic
Features
- Optimized for Pulsed, WiMAX, W-CDMA, LTE, & other light thermal load applications from DC - 4 GHz
- 45 W P3dB CW Power
- 13.5 dB Small Signal Gain
- 55% Efficiency @ P3dB
- Thermally-Enhanced Surface Mount SOIC Package
- High Reliability Gold Metallization Process
- Subject to EAR99 Export Control
Technical Resources
Datasheet
Application Notes
- S-Parameter S2P File Format Guide
- Tape and Reel Packaging for Surface Mount Components
- Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
- RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
- Recommendations For Long-Term Transistor Storage
- Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
- Surfacing Mounting Instructions - Footprint Guidelines
- Moisture Effects on the Soldering of Plastic Encapsulated Devices