NPA1007
GaN Amplifier 28 V, 10W, 0.020 - 2.5 GHz
This part has been discontinued. The suggested replacement part is: MAPC-A1007-AD000 / TR1
The NPA1007 is a GaN on silicon power amplifier optimized for 20 - 2500 MHz operation. This amplifier has been designed for saturated and linear operation and it is assembled in a lead-free 6 x 5 mm 8-lead PDFN plastic package. The NPA1007 is a general purpose device suited for narrowband and broadband applications in test and measurement, defense communications, land mobile radio and wireless infrastructure.
Discontinued: Not recommended for new designs.
Product Specifications
- Part Number
- NPA1007
- Description
- GaN Amplifier 28 V, 10W, 0.020 - 2.5 GHz
- Min Frequency(MHz)
- 20
- Max Frequency(MHz)
- 2500
- Supply Voltage(V)
- 28
- PSAT Watt(W)
- 10.0
- Gain(dB)
- 10.0
- Efficiency
- >50
- Test Freq(GHz)
- 2.00
- Package
- 6x5mm 8-lead PDFN
- PSAT(dBm)
- 40
- Package Category
- 6x5mm 8-lead PDFN
Features
- GaN on Si HEMT D-Mode Amplifier
- 100% RF Tested
- 43% Drain Efficiency @ 2500 MHz
- 12.5 dB Gain @ 2500 MHz
- 28 V Operation
- Broadband operation from 20 - 2500 MHz
- Suitable for linear and saturated applications
- Halogen-Free “Green” Mold Compound
- Lead-Free 6 x 5 mm 8-lead PDFN Package
- Fully Matched at Input, Unmatched at Output
- RoHS* Compliant
Applications
- Test & Measurement, Defense Communications, Land Mobile Radio and Wireless Infrastructure