NPA1003QA
GaN Amplifier 28 V, 5 W, 0.020 - 1.5 GHz
The NPA1003QA is a GaN on silicon power amplifier optimized for 20 - 1500 MHz operation. This amplifier has been designed for saturated and linear operation with output levels to 5 W (37 dBm) assembled in a lead-free 4 mm 16-lead QFN plastic package. The NPA1003QA is ideally suited for broadband general purpose, test and measurement, defense communications, land mobile radio and wireless infrastructure
Product Specifications
- Part Number
- NPA1003QA
- Description
- GaN Amplifier 28 V, 5 W, 0.020 - 1.5 GHz
- Min Frequency(MHz)
- 20
- Max Frequency(MHz)
- 1500
- Supply Voltage(V)
- 28
- PSAT Watt(W)
- 5.0
- Gain(dB)
- 18.0
- Efficiency
- >50
- Test Freq(GHz)
- 1.00
- Package
- 4x4 mm
- PSAT(dBm)
- 37
- Package Category
- Plastic Surface Mount
Features
- GaN on Si HEMT D-Mode Amplifier
- Suitable for Linear & Saturated Applications
- Broadband Operation from 20 - 1500 MHz
- 16 dB Gain @ 1 GHz
- 28V Operation
- 42% PAE @ 1 GHz
- 100% RF Tested
- 50 Ω Input / Output Matched
- Lead-Free 4 mm 16-lead QFN plastic Package
- RoHS* Compliant and 260°C Reflow Compatible
Applications
- Aerospace and Defense
- Broadband General Purpose
- Land mobile radar
- Defense Communications
- VHF/UHF/L-Band Radar
- Wireless Infrastructure
Technical Resources
Model Data (Sparameters)
Datasheet
Application Notes
- RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
- S-Parameter S2P File Format Guide
- Tape and Reel Packaging for Surface Mount Components
- Moisture Effects on the Soldering of Plastic Encapsulated Devices
- Surface Mounting Instructions for PQFN Packages
- Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
- Recommendations For Long-Term Transistor Storage
- Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)