MSS39-048-P55

P-Type Silicon Schottky Diodes

MACOM's MSS39,000 series of Schottky diodes is fabricated on P-Type epitaxial substrates for superior 1/f noise performance in microwave biased-detector applications up to 40 GHz

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Product Specifications

Part Number
MSS39-048-P55
Description
P-Type Silicon Schottky Diodes
Vf(V)
0.4000
Vb
5.00
Total Capacitance(pF)
0.250
Package Category
Ceramic Package
Package
P55p

Features

  • Very low 1/f Noise
  • Chip, beam lead or packaged devices
  • Detector applications to 40 GHz

Technical Resources

Datasheet

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MSS39-048-P55
P-Type Silicon Schottky Diodes
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