MRF448A
The RF Line NPN Silicon Power Transistor, 250 W, 30 MHz, 50 V
Designed primarily for high–voltage applications as a high–power linear amplifiers from 2.0 to 30 MHz. Ideal for marine and basestation equipment.
Product Specifications
- Part Number
- MRF448A
- Description
- The RF Line NPN Silicon Power Transistor, 250 W, 30 MHz, 50 V
- Min Frequency(MHz)
- 1
- Max Frequency(MHz)
- 30
- Bias Voltage(V)
- 50.0
- Pout(W)
- 250.00
- Gain(dB)
- 12.00
- Efficiency(%)
- 45
- Type
- Bipolar
- Package
- Flange Ceramic Pkg
- Package Category
- Ceramic Flange Mount
Features
- Specified 50 V, 30 MHz Characteristics:Output Power = 250 W, Minimum Gain = 12 dB, Efficiency = 45%
- 100% tested for Load Mismatch at all Phase Angels with 3:1 VSWR
- Intermodulation Distortion @ 250 W (PEP): IMD = –30 dB (max)
Technical Resources
Datasheet
Application Notes
- S-Parameter S2P File Format Guide
- Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
- RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
- Transistor Mounting and Soldering
- Recommendations For Long-Term Transistor Storage
- Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)