MRF1004MB
Bipolar Microwave Pulse Power Silicon NPN Transistor 4.0W (peak), 960–1215MHz
Designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters.
Product Specifications
- Part Number
- MRF1004MB
- Description
- Bipolar Microwave Pulse Power Silicon NPN Transistor 4.0W (peak), 960–1215MHz
- Min Frequency(MHz)
- 960
- Max Frequency(MHz)
- 1215
- Bias Voltage(V)
- 35.0
- Pout(W)
- 4.00
- Gain(dB)
- 10.00
- Efficiency(%)
- 40
- Type
- Bipolar
- Package
- Flange Ceramic Pkg
- Package Category
- Ceramic Flange Mount
Features
- Guaranteed Performance @ 1090 MHz, 35 Vdc
- Output Power = 4.0 W Peak
- Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration
- Nitride Passivated
- Industry Standard Package
- 100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR
- Minimum Gain = 10 dB
- Internal Input Matching for Broadband Operation
Technical Resources
Datasheet
Application Notes
- S-Parameter S2P File Format Guide
- Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
- RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
- Transistor Mounting and Soldering
- Recommendations For Long-Term Transistor Storage
- Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)