MASWSS0181
GaAs HP
MACOM’s MASWSS0181 is a GaAs pHEMT MMIC single pole two throw (SPDT) high power switch in a lead-free SOT-26 package. The MASWSS0181 is ideally suited for applications where high power, low control voltage, low insertion loss, high isolation, small size and low cost are required. Typical applications are for GSM and DCS handset systems that connect separate transmit and receive functions to a common antenna, as well as other related handset and general purpose applications. This part can be used in all systems operating up to 3 GHz requiring high power at low control voltage. The MASWSS0181 is fabricated using a 0.5 micron gate length GaAs pHEMT process. The process features full passivation for performance and reliability.
Product Specifications
- Part Number
- MASWSS0181
- Description
- GaAs HP
- Min Frequency(MHz)
- 300
- Max Frequency(MHz)
- 3000
- Isolation(dB)
- 23
- Insertion Loss (dB)
- 0.500
- IIP3(dBm)
- 57
- Package Category
- Plastic Surface Mount
- Package
- SOT-26
- ROHS
- Yes
Features
- Low Voltage Operation: 2.5 V
- Halogen-Free “Green” Mold Compound
- 100% Matte Tin Plating over Copper
- Lead-Free SOT-26 Package
- 0.5 micron GaAs PHEMT Process
- High Isolation: 20 dB at 2 GHz
- Low Insertion Loss: 0.40 dB at 1 GHz
- Harmonics: <-67 dBc at +34 dBm & 1 GHz
- 260°C Reflow Compatible
- RoHS* Compliant Version of MASWSS0006
Technical Resources
Datasheet
Model Data (Sparameters)
Application Notes
- S-Parameter S2P File Format Guide
- Tape and Reel Packaging for Surface Mount Components
- Surfacing Mounting Instructions - Footprint Guidelines
- Moisture Effects on the Soldering of Plastic Encapsulated Devices
- ESD/EOS Protection for GaAs MMIC Switches
- Using the DR65-0109 (DR65-0003 replacement part) to Drive SPDT PIN Switches
- Drivers for GaAs FET Switches and Digital Attenuators
- Comparison of Gallium Arsenide and Silicon PIN Diodes for High Speed Microwave Switches