MASW-002102-13580

HMIC™ Si PIN Diode with Bias

The MASW-002102-13580 and MASW-003102-13590 devices are SP2T and SP3T broad band switches with integrated bias networks utilizing MACOM's HMIC™ (Heterolithic Microwave Integrated Circuit) process, US Patent 5,268,310. This process allows the incorporation of silicon pedestals that form series and shunt diodes or vias by imbedding them in low loss, low dispersion glass. By using small spacing between elements, this combination of silicon and glass gives HMIC™ devices low loss and high isolation performance with exceptional repeatability through low millimeter frequencies. Large bond pads facilitate the use of low inductance ribbon bonds, while gold backside metallization allows for manual or automatic chip bonding via 80/20 - Au/Sn, 62/36/2 - Sn/Pb/Ag solders or electrically conductive silver epoxy.

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Product Specifications

Part Number
MASW-002102-13580
Description
HMIC™ Si PIN Diode with Bias
Min Frequency(MHz)
2
Max Frequency(MHz)
18000
Isolation(dB)
55
Insertion Loss (dB)
1.800
IIP3(dBm)
40
CW Incident Power(W)
2.0

Features

  • Broad Bandwidth Specified up to 18 GHz
  • Up to 33 dBm CW Power Handling @ +25°C
  • Glass Encapsulate Construction
  • Fully Monolithic
  • Rugged
  • Low Insertion Loss / High Isolation
  • Integrated Bias Network
  • Usable up to 26 GHz
  • 260°C Reflow Compatible
  • RoHS* Compliant

Technical Resources

Datasheet

Model Data (Sparameters)

Application Notes

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MASW-002102-13580G
Diode,HMIC Switch w/Bias network
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MASW-002102-13580W
2T,Switch W/BiasNet
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Compatible Parts