MAPC-C50060-AD

High Power RF GaN Amplifier 60 W, 50 V, 4900 - 5000 MHz

The MAPC-C50060-AD is a GaN on Silicon Carbide HEMT Amplifier designed for Driver applications. The device operates as Class-AB amplifier in the application fixture, and it is optimized for the frequency band of 4900 to 5000 MHz. Product is housed in an over-molded 7.0 x 6.5 mm DFN package.

Product Specifications

Part Number
MAPC-C50060-AD
Description
High Power RF GaN Amplifier 60 W, 50 V, 4900 - 5000 MHz
Min Frequency(MHz)
4900
Max Frequency(MHz)
5000
Supply Voltage(V)
50
PSAT Watt(W)
60.0
Gain(dB)
15.0
Efficiency
17.19
PSAT(dBm)
34

Features

  • GaN on SiC HEMT Technology
  • Designed for Driver Application
  • Average Output Power: 34.4 dBm
  • Peak Output Power: 60 W
  • Input Pre-matched Device
  • Low Thermal Resistance
  • 100% DC & RF Tested
  • RoHS* Compliant

Technical Resources

Datasheet


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MAPC-C50060-AD
High Power RF GaN Amplifier 60 W, 50 V, 4900 - 5000 MHz