MAPC-C50060-AD
High Power RF GaN Amplifier 60 W, 50 V, 4900 - 5000 MHz
The MAPC-C50060-AD is a GaN on Silicon Carbide HEMT Amplifier designed for Driver applications. The device operates as Class-AB amplifier in the application fixture, and it is optimized for the frequency band of 4900 to 5000 MHz. Product is housed in an over-molded 7.0 x 6.5 mm DFN package.
Product Specifications
- Part Number
- MAPC-C50060-AD
- Description
- High Power RF GaN Amplifier 60 W, 50 V, 4900 - 5000 MHz
- Min Frequency(MHz)
- 4900
- Max Frequency(MHz)
- 5000
- Supply Voltage(V)
- 50
- PSAT Watt(W)
- 60.0
- Gain(dB)
- 15.0
- Efficiency
- 17.19
- PSAT(dBm)
- 34
Features
- GaN on SiC HEMT Technology
- Designed for Driver Application
- Average Output Power: 34.4 dBm
- Peak Output Power: 60 W
- Input Pre-matched Device
- Low Thermal Resistance
- 100% DC & RF Tested
- RoHS* Compliant
Applications
- Point to Point
- Point-to-Point / Infrastructure