MAPC-C50030-AD

High Power RF GaN Amplifier 30 W, 48 V, DC - 6000 MHz

The MAPC-C50030-AD is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) which offers high efficiency, high gain and wide bandwidth capabilities. These transistors are ideal for tele-communications applications for multiple frequency bands, for example, 700 - 960 MHz, 1200 - 1400 MHz, 1400 - 1500 MHz, 1800 - 2200 MHz, 2500 - 2700 MHz, and 3300 - 3700 MHz. Product is housed in an over-molded 3 x 4 mm DFN package.

Product Specifications

Part Number
MAPC-C50030-AD
Description
High Power RF GaN Amplifier 30 W, 48 V, DC - 6000 MHz
Min Frequency(MHz)
0
Max Frequency(MHz)
6000
Supply Voltage(V)
48
PSAT Watt(W)
30.0
Gain(dB)
18.0
Efficiency
13.52
Test Freq(GHz)
1.47
Package
3 x 4 mm DFN
PSAT(dBm)
32

Features

  • GaN on SiC HEMT Technology
  • Average Output Power: 32 dBm
  • Peak Output Power: 30 W
  • Low Thermal Resistance
  • 100% DC and RF Tested
  • RoHS* Compliant

Technical Resources

Datasheet


Order from MACOM

MAPC-C50030-AD
High Power RF GaN Amplifier 30 W, 48 V, DC - 6000 MHz