MAPC-C50030-AD
High Power RF GaN Amplifier 30 W, 48 V, DC - 6000 MHz
The MAPC-C50030-AD is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) which offers high efficiency, high gain and wide bandwidth capabilities. These transistors are ideal for tele-communications applications for multiple frequency bands, for example, 700 - 960 MHz, 1200 - 1400 MHz, 1400 - 1500 MHz, 1800 - 2200 MHz, 2500 - 2700 MHz, and 3300 - 3700 MHz. Product is housed in an over-molded 3 x 4 mm DFN package.
Product Specifications
- Part Number
- MAPC-C50030-AD
- Description
- High Power RF GaN Amplifier 30 W, 48 V, DC - 6000 MHz
- Min Frequency(MHz)
- 0
- Max Frequency(MHz)
- 6000
- Supply Voltage(V)
- 48
- PSAT Watt(W)
- 30.0
- Gain(dB)
- 18.0
- Efficiency
- 13.52
- Test Freq(GHz)
- 1.47
- Package
- 3 x 4 mm DFN
- PSAT(dBm)
- 32
Features
- GaN on SiC HEMT Technology
- Average Output Power: 32 dBm
- Peak Output Power: 30 W
- Low Thermal Resistance
- 100% DC and RF Tested
- RoHS* Compliant
Applications
- Point-to-Point / Infrastructure