MAPC-C40450-CP

High Power RF GaN Amplifier 450 W, 48 V, 3450 - 4000 MHz

The MAPC-C40450-CP is a GaN on Silicon Carbide  HEMT Amplifier designed for asymmetrical Doherty  applications. The device is optimized for the  frequency band of 3450 to 4000 MHz. Product is  housed in an over-molded TO-package. 

Product Specifications

Part Number
MAPC-C40450-CP
Description
High Power RF GaN Amplifier 450 W, 48 V, 3450 - 4000 MHz
Min Frequency(MHz)
3450
Max Frequency(MHz)
4000
Supply Voltage(V)
48
PSAT Watt(W)
450.0
Gain(dB)
12.5
Efficiency
47.2

Features

  • GaN on SiC HEMT Technology
  • Designed for Asymmetrical Doherty Application
  • Average Output Power: 47.5 dBm
  • Peak Output Power: 450 W
  • Input and Output Pre-matched Device
  • Low Thermal Resistance
  • 100% DC and RF Tested
  • RoHS* Compliant

Applications

  • Infrastructure

Technical Resources

Datasheet


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MAPC-C40450-CP
High Power RF GaN Amplifier 450 W, 48 V, 3450 - 4000 MHz