MAPC-C27640-DP
High Power RF GaN Amplifier 640 W, 48 V, 2620 - 2690 MHz
The MAPC-C27640-DP is a GaN on Silicon Carbide HEMT Amplifier designed for asymmetrical Doherty applications. The device is optimized for the frequency band of 2620 to 2690 MHz. Product is housed in an over-molded TO-package.
Product Specifications
- Part Number
- MAPC-C27640-DP
- Description
- High Power RF GaN Amplifier 640 W, 48 V, 2620 - 2690 MHz
- Min Frequency(MHz)
- 2620
- Max Frequency(MHz)
- 2690
- Supply Voltage(V)
- 48
- PSAT Watt(W)
- 640.0
- Gain(dB)
- 15.3
- Efficiency
- 55
Features
- GaN on SiC HEMT Technology
- Designed for Asymmetrical Doherty Application
- 49.3 dBm Average Output Power
- 640 W Peak Output Power
- Input and Output Pre-matched Device
- Low Thermal Resistance
- 100% DC and RF Tested
- RoHS* Compliant