MAPC-C20130
High Power RF GaN Amplifier 130 W peak, 48 V, 1800 - 2200 MHz
The MAPC-C20130-CD is a GaN-on-Silicon Carbide HEMT Amplifier designed for asymmetrical Doherty applications. The device is optimized for the frequency band of 1800 to 2200 MHz. Product is housed in an over-molded 7 x 6.5 mm DFN package.
Product Specifications
- Part Number
- MAPC-C20130
- Description
- High Power RF GaN Amplifier 130 W peak, 48 V, 1800 - 2200 MHz
- Min Frequency(MHz)
- 1800
- Max Frequency(MHz)
- 2200
- Supply Voltage(V)
- 48
- PSAT Watt(W)
- 585.0
- Gain(dB)
- 16.7
- Efficiency
- 53
- Test Freq(GHz)
- 2.20
- Package
- 7.0 x 6.5 mm DFN
- PSAT(dBm)
- 51
Features
- GaN-on-SiC HEMT Technology
- Designed for Asymmetrical Doherty Application
- 42.7 dBm Average Output Power
- 130 W Peak Output Power
- Input Pre-matched Device
- Low Thermal Resistance
- 100% DC and RF Tested
- RoHS* Compliant