MAPC-A3030-AB
GaN on SiC Transistor, 300 W, 65 V DC - 2 GHz
The MAPC-A3030-AB is a 300 W packaged, unmatched transistor which supports both defense and commercial related applications. Offered in a thermally-enhanced flange package, the MAPC-A3030-AB provides superior performance under CW operation allowing customers to improve SWaP-C benchmarks in their next generation systems.
Product Specifications
- Part Number
- MAPC-A3030-AB
- Description
- GaN on SiC Transistor, 300 W, 65 V DC - 2 GHz
- Min Frequency(MHz)
- 0
- Max Frequency(MHz)
- 2000
- Supply Voltage(V)
- 65
- PSAT Watt(W)
- 300.0
- Gain(dB)
- 21.0
- Efficiency
- 71
- Test Freq(GHz)
- -1.00
- Package
- Lead-Free
- PSAT(dBm)
- 55
Features
- Saturated Power: 300 W
- Drain Efficiency: 71%
- Lead-Free Air Cavity Ceramic Package
- RoHS* Compliant
Applications
- Avionics - TACAN, DME, IFF
- Military Radio
- L-Band RADAR
- ISM
- General Amplification