MAPC-A3030-AB

GaN on SiC Transistor, 300 W, 65 V DC - 2 GHz

The MAPC-A3030-AB is a 300 W packaged,  unmatched transistor which supports both defense  and commercial related applications. Offered in a thermally-enhanced flange package, the  MAPC-A3030-AB provides superior performance  under CW operation allowing customers to improve SWaP-C benchmarks in their next generation  systems. 

Product Specifications

Part Number
MAPC-A3030-AB
Description
GaN on SiC Transistor, 300 W, 65 V DC - 2 GHz
Min Frequency(MHz)
0
Max Frequency(MHz)
2000
Supply Voltage(V)
65
PSAT Watt(W)
300.0
Gain(dB)
21.0
Efficiency
71
Test Freq(GHz)
-1.00
Package
Lead-Free
PSAT(dBm)
55

Features

  • Saturated Power: 300 W
  • Drain Efficiency: 71%
  • Lead-Free Air Cavity Ceramic Package
  • RoHS* Compliant

Technical Resources

Datasheet


Order from MACOM