MAPC-A3010
GaN-on-SiC Transistor, 120 W, 28 V, DC - 4 GHz
The MAPC-A3010-AB is a 120 W packaged, unmatched transistor utilizing a high performance, 0.15 µm GaN-on-SiC production process. This transistor supports both defense and commercial related applications. Offered in a thermally-enhanced flange package, the MAPC-A3010-AB provides superior performance under CW operation allowing customers to improve SWaP-C benchmarks in their next generation systems.
Product Specifications
- Part Number
- MAPC-A3010
- Description
- GaN-on-SiC Transistor, 120 W, 28 V, DC - 4 GHz
- Min Frequency(MHz)
- 0
- Max Frequency(MHz)
- 4000
- Supply Voltage(V)
- 28
- PSAT Watt(W)
- 120.0
- Gain(dB)
- 17.0
- Efficiency
- 70
- Package
- air cavity ceramic package
Features
- Saturated Power: 120 W
- Drain Efficiency: 70 %
- Small Signal Gain: 17 dB
- Lead-Free Air Cavity Ceramic Package
- RoHS* Compliant