MAPC-A3006
GaN-on-SiC Transistor, 18 W, 28 V, DC - 8 GHz
The MAPC-A3006 is a packaged, unmatched transistor utilizing a high performance, GaN on SiC production process. This transistor supports both defense and commercial related applications.
Offered in a thermally-enhanced flange package, the MAPC-A3006 provides superior performance under CW operation allowing customers to improve SWaP-C benchmarks in their next generation systems.
Product Specifications
- Part Number
- MAPC-A3006
- Description
- GaN-on-SiC Transistor, 18 W, 28 V, DC - 8 GHz
- Min Frequency(MHz)
- 0
- Max Frequency(MHz)
- 8000
- Supply Voltage(V)
- 28
- PSAT Watt(W)
- 18.0
- Gain(dB)
- 12.5
- Test Freq(GHz)
- 3.70
- PSAT(dBm)
- 42
Features
- Saturated Power: 18 W
- Drain Efficiency: 70 %
- Small Signal Gain: 12.5 dB
- Lead-Free Air Cavity Ceramic Package
- RoHS* Compliant