MAPC-A3001-AB
GaN on SiC Transistor, 300 W, 50 V DC - 2.7 GHz
The MAPC-A3001 is a 300 W packaged, unmatched transistor utilizing a high performance, GaN-on-SiC production process. This transistor supports both defense and commercial related applications. Offered in a thermally-enhanced flange package, the MAPC-A3001 provides superior performance under CW operation allowing customers to improve SWaP-C benchmarks in their next generation systems.
Product Specifications
- Part Number
- MAPC-A3001-AB
- Description
- GaN on SiC Transistor, 300 W, 50 V DC - 2.7 GHz
- Min Frequency(MHz)
- 0
- Max Frequency(MHz)
- 2700
- Supply Voltage(V)
- 50
- PSAT Watt(W)
- 300.0
- Gain(dB)
- 23.0
- Efficiency
- 75
- Test Freq(GHz)
- 1.30
- PSAT(dBm)
- 35
- Package Category
- Air Cavity
Features
- Saturated Power: 300 W
- Drain Efficiency: 75%
- Small Signal Gain: 23 dB
- Lead-Free Air Cavity Ceramic Package
- RoHS* Compliant
Applications
- Avionics - TACAN, DME, IFF
- Military Radio
- L-Band RADAR
- Electronic Warfare
- ISM
- General Amplification