MAPC-A3001-AB

GaN on SiC Transistor, 300 W, 50 V DC - 2.7 GHz

The MAPC-A3001 is a 300 W packaged,  unmatched transistor utilizing a high performance,  GaN-on-SiC production process. This transistor  supports both defense and commercial related  applications. Offered in a thermally-enhanced flange package,  the MAPC-A3001 provides superior performance  under CW operation allowing customers to  improve SWaP-C benchmarks in their next  generation systems. 

Product Specifications

Part Number
MAPC-A3001-AB
Description
GaN on SiC Transistor, 300 W, 50 V DC - 2.7 GHz
Min Frequency(MHz)
0
Max Frequency(MHz)
2700
Supply Voltage(V)
50
PSAT Watt(W)
300.0
Gain(dB)
23.0
Efficiency
75
Test Freq(GHz)
1.30
PSAT(dBm)
35
Package Category
Air Cavity

Features

  • Saturated Power: 300 W
  • Drain Efficiency: 75%
  • Small Signal Gain: 23 dB
  • Lead-Free Air Cavity Ceramic Package
  • RoHS* Compliant

Technical Resources

Datasheet


Order from MACOM

MAPC-A3001-AB000
Amplifier, GaN, 300W, DC-2.0GHz, G50V4