MAPC-A2025
GaN Amplifier 32 V, 8 W
The MAPC-A2025 is a GaN on Silicon Carbide HEMT D-mode amplifier suitable for applications 1W average power and optimized for 3.3 - 4.2 GHz modulated signal operation. The device supports pulsed, and linear operation with peak output power levels to 8 W (39 dBm) in an 4 mm surface mount QFN package.
Product Specifications
- Part Number
- MAPC-A2025
- Description
- GaN Amplifier 32 V, 8 W
- Min Frequency(MHz)
- 3300
- Max Frequency(MHz)
- 4200
- Supply Voltage(V)
- 32
- PSAT Watt(W)
- 8.0
- Gain(dB)
- 16.5
- Efficiency
- 59
- Test Freq(GHz)
- 4.20
- Package
- 4mm
- PSAT(dBm)
- 39
- Package Category
- QFN
Features
- MACOM PURE CARBIDE™ Amplifier Series
- Optimized for 3.3 - 4.2 GHz Applications
- High Terminal Impedances for Broadband Performance
- 26 - 36 V Operation
- Low Thermal Resistance
- 100% RF Tested
- RoHS* Compliant