MAAP-011420-DIE

1 W High Performance GaN Travelling Wave Amplifier MMIC

The MAAP-011420-DIE is a 1 W High Performance GaN Travelling Wave Amplifier MMIC designed to operate from 1 to 40 GHz and is offered in bare die form. It is fully matched across the frequency band. The MAAP-011420-DIE has 30 dBm of output power and can be used as a wideband power amplifier. This device is ideally suited to satellite communication and radar applications. The MAAP-011420-DIE is manufactured using a high performance 100 nm gate length GaN-on-Si HEMT power technology (D01GH). This MMIC uses gold bonding pads and backside metallization and is fully protected with silicon nitride passivation to obtain the highest level of reliability.

Product Specifications

Part Number
MAAP-011420-DIE
Description
1 W High Performance GaN Travelling Wave Amplifier MMIC
Min Frequency(MHz)
1000
Max Frequency(MHz)
40000
Gain(dB)
15.0
Output P1dB(dBm)
30.00
Package
DIE
Package Category
Die
Rohs
Yes

Features

  • Gain: 15 dB
  • Output Power: 30 dBm
  • Power Supply: External VDD: 18 V, VG2: 9 V, IDD: 220 mA
  • 50Ω Input & Output Matched
  • Die Size: 2.07 x 1.31 x 0.1 mm
  • RoHS* Compliant

Technical Resources

Datasheet


Order from MACOM

MAAP-011420-DIE
1 W High Performance GaN Travelling Wave Amplifier MMIC