MAAL-011250-DIE
X–Band, High Input Power, GaN Low Noise Amplifier
The MAAL-011250-DIE is a very low noise three stage LNA designed to operate from 8 GHz to 12 GHz with 1.4 dB of Noise Figure and 20 dB of gain and is offered in bare die form. It is full matched across the frequency band. The MAAL-011250-DIE amplifier has a single positive and single negative voltage bias which include a DC current regulation. This LNA is matched to 50 Ω at both input and output ports. This device is ideally suited to satellite communication and radar applications. The MAAL-011250-DIE is manufactured using MESC high performance 100 nm gate length GaN on Si HEMT power technology (D01GH). The MMIC uses gold bonding pads and backside metallization and is fully protected with Silicon Nitride passivation to obtain the highest level of reliability.
Product Specifications
- Part Number
- MAAL-011250-DIE
- Description
- X–Band, High Input Power, GaN Low Noise Amplifier
- Min Frequency(MHz)
- 8000
- Max Frequency(MHz)
- 12000
- Gain(dB)
- 20.0
- Output P1dB(dBm)
- 15.00
- OIP3(dBm)
- 27.0
- Bias Current(mA)
- 150
- NF(dB)
- 1.4
Features
- 1.4 dB Noise Figure
- 20 dB Gain
- High Input Power Handling
- Include DC-current regulation
- 150mA DC consumption
- +8V Drain voltage bias
- 50Ω Input & Output Matched
- Die Size: 3500μm x 1560μm x100μm (LxWxT)
- RoHS* Compliant