MA4AGSW4

AlGaAs Reflective

The MA4AGSW4 is an Aluminum-Gallium-Arsenide, single pole, four throw (SP4T), PIN diode switch.The switch features enhanced AlGaAs anodes whichare formed using MACOM’s patented heterojunctiontechnology. This technology produces aswitch with less loss than conventional GaAs processes.As much as a 0.3 dB reduction in insertionloss can be realized at 50GHz. These devices arefabricated on an OMCVD epitaxial wafer using aprocess designed for high device uniformity andextremely low parasitics. The diodes themselvesexhibit low series resistance, low capacitance, andfast switching speed. They are fully passivated withsilicon nitride and have an additional polymer layerfor scratch protection. The protective coatingprevents damage to the diode junction and anodeair-bridges during handling and assembly. Off chipbias circuitry is required.The high electron mobility of AlGaAs and the lowcapacitance of the PIN diodes makes this switchideal for fast switching, high frequency, multi-throwswitch designs. These AlGaAs PIN switches are usein switching arrays for radar systems, radiometers,test equipment and other multi-assembly components.

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Product Specifications

Part Number
MA4AGSW4
Description
AlGaAs Reflective
Min Frequency(MHz)
50
Max Frequency(MHz)
50000
Insertion Loss (dB)
0.800
Isolation(dB)
42
IIP3(dBm)
40
CW Incident Power(W)
0
Package Category
Die
Package
DIE
ROHS
Yes

Features

  • Ultra Broad Bandwidth : 50 MHz to 50 GHz
  • Functional Bandwidth : 50 MHz to 70 GHz
  • RoHS* Compliant
  • 260°C Reflow Compatible
  • Polymer Scratch Protection
  • Silicon Nitride Passivation
  • MACOM ’s unique AlGaAs Hetero-Junction Anode Technology
  • +10mA for Isolation State
  • -10mA for Low Loss State
  • Low Current Consumption
  • 32 dB Isolation at 50 GHz
  • 0.7 dB Insertion Loss

Technical Resources

Datasheet

Model Data (Sparameters)

Application Notes

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MA4AGSW4
SP4T Reflective AlGaAs Switch
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