MA4AGSW1

AlGaAs Reflective

MACOM’s MA4AGSW1 is an Aluminum-Gallium-Arsenide, single pole, single throw (SPST),PIN diode switch. The switch features enhanced Al-GaAs anodes which are formed using MACOM’s patented hetero-junction technology. This technology produces a switch with less loss than conventional AlGaAs processes. As much as a 0.3 dB reduction in insertion loss can be realized at 50GHz. The fabrication process is designed for high device uniformity and extremely low parasitics. The diodes themselves exhibit low series resistance, low capacitance, and fast switching speed. They are fully passivated with silicon nitride and have an additional polymer layer for scratch protection. The protective coating prevents damage to the diode junction and anode air-bridges during handling and assembly. Off chip bias circuitry is required. The high electron mobility of AlGaAs and the low capacitance of the PIN diodes makes this switch ideal for fast switching, high frequency, multi-throw switch designs. These versatile AlGaAs PIN switches can be used in a variety of microwave applications such as switching arrays for radar systems, radiometers, test equipment and other multi-assembly components.

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Product Specifications

Part Number
MA4AGSW1
Description
AlGaAs Reflective
Min Frequency(MHz)
50
Max Frequency(MHz)
50000
Insertion Loss (dB)
0.200
Isolation(dB)
43
IIP3(dBm)
40
CW Incident Power(W)
0.2

Features

  • Ultra Broad Bandwidth: 50 MHz to 50 GHz
  • Polymer Scratch Protection
  • Silicon Nitride Passivation
  • MACOM’s unique AlGaAs Hetero-Junction Anode Technology.
  • Low Current Consumption
  • 0.3 dB Insertion Loss
  • Functional Bandwidth : 50 MHz to 70 GHz
  • 46 dB Isolation at 50 GHz
  • -5V for Low Loss State
  • +10mA for Isolation State

Technical Resources

Datasheet

Model Data (Sparameters)

Application Notes

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SPST Reflective AlGaAs Switch
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