MA46H120
GaAs Hyperabrupt
MACOM'S MA46H120 series is a gallium arsenide flip chip hyperabrupt varactor diode. These devices are fabricated on OMCVD epitaxial wafers using a process designed for high device uniformity and extremely low parasitics. The MA46H120 diodes are fully passivated with silicon nitride and have an additional layer of polyimide for scratch protection. The protective coatings prevent damage to the junction during automated or manual handling. The flip chip configuration is suitable for pick and place insertion.
Product Specifications
- Part Number
- MA46H120
- Description
- GaAs Hyperabrupt
- Gamma
- 1.00
- Total Capacitance(pF)
- 0.350
- Quality Factor @ 50 MHz, Min
- 3000
- Breakdown Voltage(V)
- 15
Features
- Constant Gamma for Linear Tuning
- Surface Mount Configuration
- Polyimide Scratch Protection
- Silicon Nitride Passivation
- High Q
- Low Parasitic Capacitance and Inductance
Applications
- ISM