M02016
1.25 Gbps AGC Pre-Amplifier
The M02016 CMOS transimpedance amplifier (TIA) with AGC is manufactured in sub-micron CMOS. The AGC gives a wide dynamic range of 35 db. The high transimpedance gain of 24 kO gives good sensitivity. For optimum system performance, the M02016 die should be mounted with a silicon or InGaAs PIN photodetector inside a lensed TO-Can or other optical sub-assembly. The M02016 can be used with internal or exteral bias to optimize the PINs performance. A replica of the average photodiode current is available at the MON pad for photo-alignment and signal strength monitoring.
Product Specifications
- Part Number
- M02016
- Description
- 1.25 Gbps AGC Pre-Amplifier
- Max Data Rate(Gbps)
- 1.3
Features
- Typical -29dBm sensitivity, +6 dBm saturation at 1.25 Gbps when used with 0.9 A/W InGaAs PIN. (Cpd = 0.5pF, BER 10-10)
- Same pad layout and die size as M02011/3/4/5
- Internal or external bias for photodiode
- AGC provides dynamic range of 35 dBm
- Monitor Output
- Available in die form only
- PIN or APD sensor
- Standard +3.3 Volt supply
- Differential output
- Fabricated in standard CMOS
- Typical differential transimpedance: 24 kO
- Minimum 800 Mhz bandwidth and multi-pole roll-off provide operation to 1.25Gbps