ENGLA00259A
12.5 dB Gain pHEMT Low Noise Amplifier, DIE, 12 – 26 GHz
The ENGLA00259A is a wideband GaAs pHEMT two-stage 12.5 dB gain low noise distributed amplifier, operating across 12 to 26 GHz. The design is 50 ohm matched. The LNA has a typical noise figure of < 3 dB across 14 to 26 GHz, at room temperature. Output third-order intercept point (OIP3) is typically above 17 dBm. The amplifier has gold backside metallization and is designed for gold-tin eutectic or high thermal conductivity silver epoxy attachment.
Product Specifications
- Part Number
- ENGLA00259A
- Description
- 12.5 dB Gain pHEMT Low Noise Amplifier, DIE, 12 – 26 GHz
- Min Frequency(MHz)
- 12000
- Max Frequency(MHz)
- 26000
- Gain(dB)
- 12.5
- NF(dB)
- 3.00
- OIP3(dBm)
- 20.0
- Package Category
- Die
- RL In / Out (dB)
- 14/11
Features
- Operation Across 12 – 26 GHz
- Small Signal Gain: 12.5 dB
- Noise Figure: 3 dB
- I/O Return Loss: 11.5 dB or Better
- OIP3: 17 to 20 dBm
- Die Size : 2.12 x 1.73 x 0.1 mm; 3.67 sq. mm; 0.083 x 0.068 x 0.004 inch
- RoHS* Compliant